april 2013 ?2013 fairchild semiconductor corporation FDMS86350 rev. c www.fairchildsemi.com 1 FDMS86350 n-channel powertrench ? mosfet FDMS86350 n-channel powertrench ? mosfet 80 v, 80 a, 2.4 m features ? max r ds(on) = 2.4 m at v gs = 10 v, i d = 25 a ? max r ds(on) = 3.2 m at v gs = 8 v, i d = 22 a ? advanced package and silicon combination for low r ds(on) and high efficiency ? msl1 robust package design ? 100% uil tested ? rohs compliant general description this n-channel mosfet is produced using fairchild semiconductor?s advanced power trench ? process that has been especially tailored to minimi ze the on-state resistance and yet maintain superior switching performance. applications ? primary mosfet ? synchronous rectifier ? load switch ? motor control switch mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 80 v v gs gate to source voltage 20 v i d drain current -continuous t c = 25 c 80 a -continuous t a = 25 c (note 1a) 25 -pulsed (note 4) 300 e as single pulse avalanche energy (note 3) 864 mj p d power dissipation t c = 25 c 156 w power dissipation t a = 25 c (note 1a) 2.7 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case 0.8 c/w r ja thermal resistance, junction to ambient (note 1a) 45 device marking device package reel size tape width quantity FDMS86350 FDMS86350 power 56 13 ?? 12 mm 3000 units bottom power 56 top pin 1 g s s s d d d d d d d d s s s g pin 1
FDMS86350 n-channel powertrench ? mosfet www.fairchildsemi.com 2 ?2013 fairchild semiconductor corporation FDMS86350 rev. c electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0 v 80 v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 45 mv/c i dss zero gate voltage drain current v ds = 64 v, v gs = 0 v 1 a i gss gate to source leakage current v gs = 20 v, v ds = 0 v 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a 2.5 3.8 4.5 v v gs(th) t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25 c -12 mv/c r ds(on) static drain to source on resistance v gs = 10 v, i d = 25 a 2.0 2.4 m v gs = 8 v, i d = 22 a 2.5 3.2 v gs = 10 v, i d = 25 a, t j = 125 c 3.1 3.8 g fs forward transconductance v ds = 5 v, i d = 25 a 70 s c iss input capacitance v ds = 40 v, v gs = 0 v, f = 1 mhz 8030 10680 pf c oss output capacitance 1370 1825 pf c rss reverse transfer capacitance 31 50 pf r g gate resistance 0.1 1.1 3 t d(on) turn-on delay time v dd = 40 v, i d = 25 a, v gs = 10 v, r gen = 6 50 80 ns t r rise time 34 55 ns t d(off) turn-off delay time 40 65 ns t f fall time 11 20 ns q g total gate charge v gs = 0 v to 10 v v dd = 40 v, i d = 25 a 110 155 nc q g total gate charge v gs = 0 v to 8 v 90 127 nc q gs gate to source charge 46 nc q gd gate to drain ?miller? charge 23 nc v sd source to drain diode forward voltage v gs = 0 v, i s = 2.1 a (note 2) 0.71 1.2 v v gs = 0 v, i s = 25 a (note 2) 0.79 1.3 t rr reverse recovery time i f = 25 a, di/dt = 100 a/ s 63 101 ns q rr reverse recovery charge 62 100 nc notes : 1. r ja is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. 3. e as of 864 mj is based on starting t j = 25 c, l = 3 mh, i as = 24 a, v dd = 80 v, v gs = 10 v, 100% test at l = 0.1 mh, i as = 74 a. 4. pulse id limited by junction temperature, td <= 100 s, please refer to soa curve for more details. a. 45 c/w when mounted on a 1 in 2 pad of 2 oz copper. b. 115 c/w when mounted on a minimum pad of 2 oz copper. g df ds sf ss g df ds sf ss
FDMS86350 n-channel powertrench ? mosfet www.fairchildsemi.com 3 ?2013 fairchild semiconductor corporation FDMS86350 rev. c typical characteristics t j = 25 c unless otherwise noted figure 1. 012345 0 50 100 150 200 250 300 v gs = 7 v v gs = 6.5 v v gs = 8 v pulse duration = 80 p s duty cycle = 0.5% max v gs = 6 v v gs = 10 v i d , drain current (a) v ds , drain to source voltage (v) on-region characteristics figure 2. 0 50 100 150 200 250 300 0 1 2 3 4 5 v gs = 6.5 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 7 v v gs = 8 v v gs = 6 v v gs = 10 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i d = 25 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 5678910 0 2 4 6 8 10 t j = 125 o c i d = 25 a t j = 25 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 345678 0 50 100 150 200 250 300 t j = 150 o c v ds = 5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 100 500 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDMS86350 n-channel powertrench ? mosfet www.fairchildsemi.com 4 ?2013 fairchild semiconductor corporation FDMS86350 rev. c figure 7. 0 20406080100120 0 2 4 6 8 10 i d = 25 a v dd = 50 v v dd = 40 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 30 v gate charge characteristics figure 8. 0.1 1 10 80 10 100 1000 10000 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 10 100 1000 1 10 100 t j = 100 o c t j = 25 o c t j = 125 o c t av , time in avalanche (ms) i as , avalanche current (a) u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 40 80 120 160 200 v gs = 8 v limited by package r t jc = 0.8 o c/w v gs = 10 v i d , drain current (a) t c , case temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs case temperature figure 11. 0.01 0.1 1 10 100 400 0.01 0.1 1 10 100 500 10 s 100 p s 10 ms dc 1 s 100 ms 1 ms i d , drain current (a) v ds , drain to source voltage (v) single pulse t j = max rated r t ja = 115 o c/w t a = 25 o c curve bent to measured data this area is limited by r ds(on) fo rw ard bi as safe operating area f i g u r e 1 2 . s i n g l e p u l s e m a x i m u m po wer dissipation 10 -4 10 -3 10 -2 10 -1 110 100 1000 0.5 1 10 100 1000 10000 single pulse r t ja = 115 o c/w t a = 25 o c p ( pk ) , peak transient power (w) t, pulse width (sec) typical characteristics t j = 25 c unless otherwise noted
FDMS86350 n-channel powertrench ? mosfet www.fairchildsemi.com 5 ?2013 fairchild semiconductor corporation FDMS86350 rev. c figure 13. junction-to-ambient transient thermal response curve 10 -4 10 -3 10 -2 10 -1 11 0 100 1000 0.0001 0.001 0.01 0.1 1 2 single pulse r t ja = 115 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics t j = 25 c unless otherwise noted
FDMS86350 n-channel powertrench ? mosfet www.fairchildsemi.com 6 ?2013 fairchild semiconductor corporation FDMS86350 rev. c dimensional outlin e and pad layout
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